Compact InAs Quantum Dot Multilayers Realizing High-Power Lasers

Authors: Chen, Z.J., Yang, B., Yin, Z.C., Chen, J., Wei, W.Q., Wang, Z.H., Wang, T., Zhang, J.J.

Journal: Chinese Physics Letters

Publication Date: 01/04/2026

Volume: 43

Issue: 4

eISSN: 1741-3540

ISSN: 0256-307X

DOI: 10.1088/0256-307X/43/4/040403

Abstract:

Utilizing quantum dots (QDs) as a gain medium to achieve ultra-high optical output at telecommunication wavelengths remains a persistent goal. In this work, we present an approach to enhance optical gain while maintaining a compact active region, suitable for high-power QD lasers operating at a wavelength of 1.31 μm. By reducing the growth temperature of InAs QDs in the latter layers, compact 12-layer QDs with high density and photoluminescence intensity are achieved. Based on this optimized structure, high-power QD lasers are grown and fabricated with a 1600 μm cavity length and a 2.5 μm ridge width, delivering a maximum output power of 212 mW, a peak wall-plug efficiency of 16%, and a maximum net modal gain of 6.6 cm⁻¹ at room temperature. Moreover, the device demonstrates excellent thermal robustness, maintaining an output power of 99 mW at 110 °C.

Source: Scopus