Mid-wave infrared InAsSb barrier detectors monolithically grown on silicon

Authors: Cheng, K., Han, D., Ji, W., Yan, K., Li, C., Shen, K., Wang, T., Zhang, J., Wu, J.

Journal: IEEE Electron Device Letters

Publication Date: 01/01/2026

eISSN: 1558-0563

ISSN: 0741-3106

DOI: 10.1109/LED.2026.3707297

Abstract:

Monolithic silicon integration provides apromising pathway toward low-cost, large-format infraredphotodetectors despite substantial lattice mismatch. Here,mid-wave infrared InAsSb barrier detectors weremonolithically grown on silicon via molecular beam epitaxy.To mitigate the effects of a high threading dislocationdensity caused by the 11% lattice mismatch, a unipolarbarrier was employed to suppress defect-inducedgeneration-recombination (G-R) current, therebymaintaining reliable device performance. Electricalmeasurements showed low dark current densities of1.40×10^-7 and 1.75×10^-2 A/cm² at 77 and 300 K, respectively,under a bias of -0.2 V. Furthermore, the devices achieved apeak responsivity of 0.75 A/W and a quantum efficiency(QE) of 26.6% at 3.5 μm. These metrics validate theeffectiveness of the barrier architecture in neutralizing thedeleterious impact of threading dislocations, confirmingthat band engineering provides superior defect tolerancefor antimonide-based infrared sensing onCMOS-compatible platforms.

Source: Scopus